Samsung Electronics unveiled next-generation 3D memory technology, including a 400-layer V10 Bonding V-NAND prototype and a new zHBM chip designed for AI applications, at the Future of Memory and Storage conference in Santa Clara, California on Tuesday. The new memory architecture increases storage density and performance to meet surging demand from AI data centers. Samsung, the world's largest memory chip manufacturer, presented the technology as competition intensifies in the rapidly expanding AI chip market.
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